| PART |
Description |
Maker |
| CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications
|
Vishay
|
| ILA5737D |
Low-power high-frequency triple (metric waves
|
INTEGRAL[Integral Corp.]
|
| CA3102 |
Differential Amplifier, Dual, High Frequency, Low Power Applications Up to 500MHz
|
Intersil
|
| P2084A P2082A P2084A-08TT P2082A-08SR P2082A-08ST |
312 MHz, OTHER CLOCK GENERATOR, PDSO8
Low Cost Frequency Multiplier
High Precision Frequency Multipliers
|
ALSC[Alliance Semiconductor Corporation]
http://
|
| EC3H04C 1224 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications
From old datasheet system
High-Frequency Low-Noise Amplifier and OSC Applications 高频低噪声放大器和OSC应用
|
Sanyo Semicon Device
Sanyo Electric Co., Ltd.
|
| 2SD1591 |
Audio Frequency Power Amplifier and Low Speed High Current Switching Industrial Use
|
Unknow
|
| 2SB718 2SB717 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 低频高压放大器互补配SB7572SB758
(2SB717 / 2SB718) LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair
From old datasheet system
|
Hitachi,Ltd.
Hitachi Semiconductor
|
|
